<sup>28</sup>Si/SiGe heterostructures with engineered semiconductor/dielectric interface
ORAL
Abstract
Advancing the materials science of quantum information devices plays an essential role in the pursuit of larger spin-based quantum processors with more functionality. Previously, we demonstrated 28Si/SiGe heterostructures that hosted quantum processors with two-qubit gate fidelities above 99\% [1][2]. We build on these results and present 28Si/SiGe heterostructures with an engineered semiconductor/dielectric interface to reduce remote impurities and improve device uniformity on a wafer scale. We characterize the heterostructures by magnetotransport and show a two-fold reduction of the standard deviation for key transport metrics such as peak mobility, percolation density, and quantum lifetime. We correlate the results of quantum transport with studies of charge noise in quantum dots fabricated on the same heterostructures.
[1] Xue, X et al., arXiv:2107.00628 (2021)
[2] Noiri, A et al., arXiv:2108.02626 (2021)
[1] Xue, X et al., arXiv:2107.00628 (2021)
[2] Noiri, A et al., arXiv:2108.02626 (2021)
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Presenters
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Davide Degli Esposti
- QuTech and Kavli Institute of Nanoscience, TU Delft, P.O. Box 5046, 2600 GA Delft, The Netherlands