Hybrid Molecular Beam Epitaxy of Germanium-Containing Oxides
ORAL
Abstract
Wide bandgap and high carrier mobility are two important materials characteristics for transparent conducting oxides and power device applications. Germanium-containing oxides such as SrGeO3 and rutile GeO2 meet both these requirements according to ab initio calculations. Predicted room-temperature mobilities exceed those of the well-known alkaline earth stannates such as BaSnO3 and SrSnO3. In this talk, we present the first demonstration of hybrid molecular beam epitaxy (MBE) growth of Ge-based oxides including perovskite SrGe1-xSnxO3 and rutile Ge1-xSnxO2. By combining high-resolution X-ray diffraction, scanning transmission electron microscopy, X-ray photoelectron spectroscopy, and first-principles calculations, we demonstrate the successful growth of phase-pure, epitaxial, and coherent SrSn1-xGexO3 films on GdScO3 (110) substrates up to x = 0.16 and of coherent Ge1-xSnxO2 films on TiO2 (001) with x = 0.54. These findings confirm the viability of the hybrid MBE method for the growth of germanium-containing oxides and open the door to further research on high-quality germanate films.
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Presenters
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Fengdeng Liu
- University of Minnesota
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455, USA