Advanced Approaches in Modeling and Simulation of Defects
FOCUS · B67 · ID: 47656
Presentations
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Computational Approaches to Defects and Doping in Non-Ideal Semiconductors
ORAL · Invited
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Publication: [1] J. Pan, J. Cordell, G.J. Tucker, A.C. Tamboli, A. Zakutayev, S. Lany, "Interplay between Composition, Electronic Structure, Disorder, and Doping due to Dual Sublattice Mixing in Nonequilibrium Synthesis of ZnSnN2:O ", Adv. Mater. 1807406 (2019). DOI: 10.1002/adma.201807406
[2] A. Goyal, A. Zakutayev, V. Stevanovic, S. Lany, "Computational Fermi level engineering and doping-type conversion of Mg:Ga2O3 via three-step synthesis process", J. Appl. Phys. 129, 245704 (2021). DOI: 10.1063/5.0051788
[3] S.L. Millican, J.M. Clary, C.B. Musgrave, S. Lany, "Redox defect thermochemistry of FeAl2O4 hercynite in water-splitting from first principles methods" (unpublished)Presenters
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Stephan Lany
- National Renewable Energy Laboratory
Authors
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Stephan Lany
- National Renewable Energy Laboratory
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Accurate Excitations of the NV- Defect in Diamond via Embedding with Auxilliary-Field Quantum Monte Carlo
ORAL
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Presenters
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Brian M Busemeyer
- Flatiron Institute
Authors
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Brian M Busemeyer
- Flatiron Institute
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Shiwei Zhang
- Simons foundation
- Simons Foundation
- Flatiron Institute
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Ab-initio investigation of Er<sup>3+</sup> defects in tungsten disulfide
ORAL
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Presenters
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Gabriel I López-Morales
- The Graduate Center of the City University of New York, New York, New York 10016, USA
- The Graduate Center, City University of
Authors
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Gabriel I López-Morales
- The Graduate Center of the City University of New York, New York, New York 10016, USA
- The Graduate Center, City University of
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Alexander Hampel
- Simons Foundation
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Gustavo Lopez
- Lehman College
- CUNY
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Vinod M Menon
- The City College of New York
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Johannes Flick
- Flatiron Institute, Center for Computational Quantum Physics
- Simons Foundation
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Carlos A Meriles
- City College of New York
- The City College of New York
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First-principles ionized-impurity scattering and charge transport in doped materials
ORAL
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Publication: arXiv:2110.04920 (2021)
Presenters
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I-Te Lu
- Department of Applied Physics and Materials Science, California Institute of Technology, Pasadena, CA 91125, USA
- Caltech
Authors
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I-Te Lu
- Department of Applied Physics and Materials Science, California Institute of Technology, Pasadena, CA 91125, USA
- Caltech
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Jin-Jian Zhou
- School of Physics, Beijing Institute of Technology
- Department of Applied Physics and Materials Science, California Institute of Technology
- Caltech
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Jinsoo Park
- Department of Applied Physics and Materials Science, California Institute of Technology
- Caltech
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Marco Bernardi
- Department of Applied Physics and Materials Science, California Institute of Technology
- Caltech
- Department of Applied Physics and Materials Science, California Institute of Technology, Pasadena, CA 91125, USA
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Machine Learning Defect Properties of Semiconductors
ORAL
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Publication: 1. A. Mannodi-Kanakkithodi et al., "Comprehensive Computational Study of Partial Lead Substitution in Methylammonium Lead Bromide", Chemistry of Materials 31 (10), 3599–3612 (2019).
2. A. Mannodi-Kanakkithodi et al., "Machine learned impurity level prediction in semiconductors: the example of Cd-based chalcogenides", npj Computational Materials 6, 39 (2020).
3. A. Mannodi-Kanakkithodi et al., "Defect Energetics in Pseudo-Cubic Mixed Halide Lead Perovskites from First-Principles", Journal of Physical Chemistry C. 124, 31, 16729–16738 (2020).
4. F. G. Sen et al., "Computational Design of Passivants for CdTe Grain Boundaries", Solar Energy Materials and Solar Cells 232, 111279 (2021).
5. A. Mannodi-Kanakkithodi et al., "Universal Machine Learning Framework for Impurity Level Prediction in Group IV, III-V and II-VI Semiconductors", under review. PREPRINT: https://doi.org/10.21203/rs.3.rs-723035/v1 (2021).
6. A. Mannodi-Kanakkithodi et al., "Accelerated Screening of Functional Atomic Impurities in Halide Perovskites using High-Throughput Computations and Machine Learning", under review.
7. M. P. Polak et al., "Machine Learning for Impurity Charge-State Transition Levels in Semiconductors from Elemental Properties using Multi-Fidelity datasets", under review.Presenters
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Arun Kumar Mannodi Kanakkithodi
- Purdue University
Authors
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Arun Kumar Mannodi Kanakkithodi
- Purdue University
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Xiaofeng Xiang
- University of Washington
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Jiaqi Yang
- Purdue University
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Laura Jacoby
- University of Washington
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Maria K Chan
- Argonne National Laboratory
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First-principles study of planar Humble defects in Ge and GeSi alloys
ORAL
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Presenters
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Shang Ren
- Rutgers University
Authors
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Shang Ren
- Rutgers University
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Hongbin Yang
- Rutgers, The State University of New Jersey
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Sobhit Singh
- Rutgers University
- Rutgers University, New Brunswick
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Eric Garfunkel
- Rutgers University
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David Vanderbilt
- Rutgers University
- Rutgers University, New Brunswick
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Prospects for n-type conductivity in cubic boron nitride
ORAL
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Publication: M. E. Turiansky, D. Wickramaratne, J. L. Lyons, and C. G. Van de Walle, Appl. Phys. Lett. 119, 162105 (2021).
Presenters
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Mark E Turiansky
- University of California, Santa Barbara
Authors
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Mark E Turiansky
- University of California, Santa Barbara
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Darshana Wickramaratne
- United States Naval Research Laboratory
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John L Lyons
- United States Naval Research Laboratory
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Chris G Van de Walle
- University of California, Santa Barbara
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Impurity Auger recombination in gallium nitride from first principles
ORAL
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Presenters
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Fangzhou Zhao
- University of California, Santa Barbara
Authors
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Fangzhou Zhao
- University of California, Santa Barbara
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Mark E Turiansky
- University of California, Santa Barbara
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Chris G Van de Walle
- University of California, Santa Barbara
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Quantum oscillatory interaction between isovalent centers in semiconductors
ORAL
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Presenters
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Kejie Bao
- Chinese University of Hong Kong
Authors
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Kejie Bao
- Chinese University of Hong Kong
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Xiaodong Zhang
- Chinese University of Hong Kong
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Junyi Zhu
- Chinese University of Hong Kong
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Molecular dopants in LiGaO<sub>2</sub>: N<sub>2</sub>, NO and O<sub>2</sub> in Ga and Li vacancies
ORAL
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Publication: [1] A. Boonchun, K. Dabsamut, and W. R. L. Lambrecht, "First principles study of point defects in LiGaO2," Journal of Applied Physics 126, 155703 (2019).
[2] K. Dabsamut, A. Boonchun, and W. R. L. Lambrecht, "First principles study of n- and p-type doping opportunities in LiGaO2," Journal of Physics D: Applied Physics 53 (27), 274002 (2020).
Presenters
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Klichchupong Dabsamut
- Kasetsart University
Authors
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Klichchupong Dabsamut
- Kasetsart University
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Adisak Boonchun
- Kasetsart University
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Walter R Lambrecht
- Case Western Reserve University
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Tuning of Band Gap in Doped Diamonds
ORAL
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Publication: The results of this work will be used in a paper, which we are preparing right now.
Presenters
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Matúš Kaintz
- Czech Technical University in Prague
Authors
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Matúš Kaintz
- Czech Technical University in Prague
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Antonio Cammarata
- Czech Technical University in Prague
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Interstitials of binary rock salt compounds
ORAL
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Publication: N. Mishra, G. Makov. Point defects in lead sulfide: A first-principles study. Comput. Mater. Sci. 190 (2021) 110285
Presenters
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Neeraj Mishra
- Ben-Gurion University of the Negev
Authors
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Neeraj Mishra
- Ben-Gurion University of the Negev
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Guy Makov
- Ben-Gurion University of the Negev
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Hyperfine Constant and Binding Energy Calculation of Shallow Donor in Silicon from Pseudopotential and All-Electron Mixed Approach
ORAL
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Publication: Hyperfine Constant and Binding Energy Calculation of Shallow Donor in Silicon from Pseudopotential and All-Electron Mixed Approach (planned paper)
Presenters
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HONGYANG MA
- UNSW Sydney
Authors
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HONGYANG MA
- UNSW Sydney
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Yu-ling Hsueh
- University of New South Wales
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Serjaum S Monir
- University of New South Wales
- UNSW Sydney
- Centre of Excellence for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052, Australia
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Rajib Rahman
- University of New South Wales
- Silicon Quantum Computing Pty Ltd., Level 2, Newton Building, UNSW Sydney, Kensington, NSW 2052, Australia
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