"Low temperature energy relaxation in a two-dimensional carrier system"
ORAL
Abstract
We discuss mechanisms and available predictions for carrier thermalization in a two-dimensional quantum well, with the eye towards understanding regimes in which carrier interactions are prominent. Of primary interest to us is the value of the exponent u that controls the thermal power flow P between the 2-dimensional charged layer at a temperature Te and the environment at a temperature T according to the frequently used form P~ Teu - Tu. We will review theory for the P(T) functions in the cases of piezoelectric and deformation electron-photon coupling, the effects of disorder on the exponent and the predictions for the so-called hydrodynamic regime and compare these to energy relaxation measurements obtained in studies of transport in GaAs/AlGaAs quantum wells with a high interaction parameter rs>20.
*The work was partially supported by NSF DMR-1206784 (A.K. and E.K.) and NSF DMR-1607631 ( C.-W. L. and X.G.)
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Presenters
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Elina Klysheva
- University Of Cincinnati