Low-Energy Photoluminescence Induced by Substitutional Nitrogen in Single-Layer Tungsten Disulfide

ORAL

Abstract

Defect engineering is an important technique to tailor the electronic and optical properties of two-dimensional materials. By creating defects using remote N2 plasma exposure, distinct low-energy photoluminescence (PL) peak at 1.59 eV is introduced in single-layer WS2. The N2 plasma exposure dose has a critical influence over this PL peak intensity, making it strongest at about 2.0% sulfur deficiencies and vanish at 5.6% or higher sulfur deficiencies. First-principles calculations suggest that this PL peak is caused by the sulfur substitutions by nitrogen. The substitutional nitrogen defect can serve as an isolated artificial atom for single-photon emitters and can be used to monitor the nitrogen p-type doping concentrations.

*We acknowledge the support from the NSF under grant number ECCS-1943895. First-principles calculations were performed on the Pennsylvania State University's Institute for Computational and Data Sciences Advanced CyberInfrastructure (ICDS-ACI). Use of the Center for Nanoscale Materials, an Office of Science user facility, was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. Samples were produced in the 2D Crystal Consortium-Materials Innovation Platform (2DCC-MIP) facility under NSF cooperative agreement DMR-1539916.

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Presenters

  • Qingkai Qian

    • Key Laboratory of Optoelectronic Technology and System of Ministry of Education, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China

Authors

  • Qingkai Qian

    • Key Laboratory of Optoelectronic Technology and System of Ministry of Education, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China

  • Lintao Peng

    • Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, United States

  • Yuanxi Wang

    • Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States

  • Anne Marie Z. Tan

    • Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, United States

  • Liangbo Liang

    • Oak Ridge National Lab
    • Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States

  • Tanushree H. Choudhury

    • 2D Crystal Consortium, Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA

  • Joan M. Redwing

    • 2D Crystal Consortium, Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA

  • Alexander A. A Puretzky

    • Oak Ridge National Laboratory
    • Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States

  • David B. Geohegan

    • Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States

  • Richard G. G Hennig

    • University of Florida
    • Department of Materials Science and Engineering, University of Florida
    • Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, United States

  • Xuedan Ma

    • Argonne National Laboratory
    • Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, United States

  • Shengxi Huang

    • The Pennsylvania State University
    • Pennsylvania State University
    • Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States