Moiré patterns in graphene and transition metal dichalcogenide heterostructures

Vertically stacked heterostructures of two-dimensional materials provide a platform for realizing novel electronic states due to proximity effects. In particular, moiré patterns in two-dimensional material heterostructures have been shown to create flat bands that favor the occurrence of correlated electronic states. In this work, we use scanning tunneling microscopy and spectroscopy to study moiré patterns in mechanically assembled heterostructures of graphene and transition metal dichalcogenides. By comparing to a theoretical model, in the case of graphene - ReS₂ heterostructures we find the presence of stripped moiré patterns, reflecting the different crystal symmetry of the two lattices.