Scanning Tunneling Microscopy Study of S Vacancy Defect-Defect Interactions in Monolayer WS<sub>2</sub>
ORAL
Abstract
Atomic defects in crystalline semiconductors strongly affect their electronic properties, such as electron transport and optical response. Defects in two dimensional (2D) semiconductors, such as transition metal dichalcogenides (TMD’s), have a more dramatic impact than bulk counterparts due to less screening and increased substrate interactions. In particular, different atomic vacancies have been reported, but their role in the electronic structure must be established. Deep in-gap states were predicted for different defect structures in 2D TMD’s, but direct experimental observation of defect structure and electronic properties is necessary to tailor TMD’s for device design. Here we report the creation of a high concentration of S vacancy defects in WS2 monolayers by vacuum annealing, and characterization of their electronic properties and structure using scanning tunneling microscopy and spectroscopy. We find that interaction of nearby S vacancies results in a rich variety of deep in-gap states, shedding light on the role of defects in TMD electronic properties.
*This work was supported by NSF MRSEC (DMR-1720595) and DMR-EPM (DMR-1808751) as well as contributions from the US Airforce (FA2386-18-1-4097) and the Welch Foundation (F-1672).
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Presenters
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Madisen Holbrook
- Physics, University of Texas at Austin