Quantum transport in Dirac semimetal Cd<sub>3</sub>As<sub>2</sub> thin films
ORAL
Abstract
The synthesis of thin films of the Dirac semimetal (DSM) Cd3As2 by molecular beam epitaxy (MBE) provides an attractive avenue for studying quantum transport in a DSM as a function of quantum confinement and chemical potential. We have used MBE to grow thin films of Cd3As2 on GaAs (111)B substrates with a GaSb buffer layer. The film thickness is varied in the range of 7 nm – 20 nm. Atomic force microscopy, x-ray diffraction, and electrical transport show that the films have good crystalline quality (root mean square surface roughness ~ 1.5 nm and full-width half maximum of rocking curves ~ 0.12°) and reasonable electron mobility (5,000 – 40,000 cm2/V.s at 4.2 K). We have studied Shubnikov-de Haas oscillations in lithographically patterned top gated Hall bar devices as a function of gate voltage, temperature, and magnetic field magnitude/angle. We interpret these quantum oscillation data in concert with in vacuo angle-resolved photoemission spectroscopy and first-principles calculations to gain insight into the Fermi surface of these DSM thin films.
*Supported by the Institute for Quantum Matter under DOE EFRC grant DE-SC0019331, the nCORE/SMART Center, and the Penn State Two-Dimensional Crystal Consortium-Materials Innovation Platform (2DCC-MIP) under NSF Grant No. DMR-1539916
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Presenters
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Run Xiao
- Pennsylvania State University
- Physics, Pennsylvania State University