Electronic and structural changes in SmNiO<sub>3</sub> perovskite under doping with hydrogen

ORAL

Abstract

Doping with hydrogen leads to formation of a new insulating phase in rare-earth nickelates, such as SmNiO3. High mobility of hydrogen atoms inside the perovskite crystal lattice allows one to change the distribution of hydrogen by applying short voltage pulses. The memory nano-devices based on this effect are promising candidates for creations of artificial synapses for neuromorphic computing.
We used nanofocused x-ray beam for spectroscopic and diffraction studies of the hydrogen-doped SmNiO3 film. We observed partial reduction of nickel valence due to addition of an extra electron from the dopant. We argue that the changes in electronic structure is mainly responsible for formation of the insulating phase, while the subtle changes in the crystal structure are not so significant. This allows one to use hydrogen and other light elements to create new phases in other complex transition metal oxides.

*“Quantum Materials for Energy Efficient Neuromorphic Computing”, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences under Award no. DE-SC0019273.
U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Award no. DE-SC0019273 and contracts no. DE-AC02-06CH11357 and no. DE-SC0012704.

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Presenters

  • Ivan Zaluzhnyy

    • University of California, San Diego
    • Department of Physics, University of California, San Diego

Authors

  • Ivan Zaluzhnyy

    • University of California, San Diego
    • Department of Physics, University of California, San Diego

  • Peter Oliver Sprau

    • University of California, San Diego
    • Advanced Development Center, ASML
    • Advanced Development Center, ASML; Laboratory of Atomic and Solid State Physics, Cornell University

  • Richard Tran

    • University of California, San Diego

  • Qi Wang

    • School of Materials Engineering, Purdue University

  • Hai-Tian Zhang

    • School of Materials Engineering, Purdue University

  • Zhen Zhang

    • School of Materials Engineering, Purdue University, West Lafayette, IN 47907
    • School of Materials Engineering, Purdue University

  • Nelson Hua

    • University of California, San Diego
    • SLAC National Accelerator Laboratory

  • Boyan Stoychev

    • University of California, San Diego

  • Mathew J Cherukara

    • Center for nanoscale materials, Argonne National Laboratory

  • Martin Holt

    • Center for nanoscale materials, Argonne National Laboratory
    • Argonne National Laboratory
    • Argonne National Lab

  • Evgeny Nazarertski

    • National Synchrotron Light Source II, Brookhaven National Laboratory

  • Xiaojing Huang

    • National Synchrotron Light Source II, Brookhaven National Laboratory
    • Brookhaven National Laboratory

  • Hanfei Yan

    • National Synchrotron Light Source II, Brookhaven National Laboratory

  • Ajith Pattammattel

    • National Synchrotron Light Source II, Brookhaven National Laboratory

  • Yong S. Chu

    • National Synchrotron Light Source II, Brookhaven National Laboratory

  • Shyue Ping Ong

    • University of California, San Diego

  • Shriram Ramanathan

    • School of Materials Engineering, Purdue University, West Lafayette, IN 47907
    • School of Materials Engineering, Purdue University
    • Materials engineering, Purdue University

  • Oleg Shpyrko

    • University of California, San Diego
    • Department of Physics, University of California, San Diego

  • Alex Frano

    • University of California, San Diego
    • University of California San Diego
    • Department of Physics, University of California, San Diego