Momentum resolved ground/excited states and the ultra-fast excited state dynamics of monolayer MoS<sub>2</sub>
ORAL
Abstract
The emergence of transition metal dichalcogenides (TMD) as crystalline atomically thin semiconductors has created a tremendous amount of scientific and technological interest. Many novel device concepts have been proposed and realized. Nonetheless, progress in k-space investigations of ground/excited state electronic structures has been slow due to the challenge to create large scale, laterally homogeneous samples. Taking advantage of recent advancements in chemical vapor deposition, here we create a wafer-size MoS2 monolayer with well-aligned lateral orientation. The ground state and excited state electronic structures are probed using scanning tunneling spectroscopy (STS), angle-resolved photoemission (ARPES) and time-resolved (tr-)ARPES. In addition to mapping out the momentum-space quasiparticle band structure in the valence and conduction bands, we unveil ultrafast excited state dynamics, including inter- and intra-valley carrier scattering and a rapid downward energy shift by ~ 0.2eV lower than the initial free carrier state at sigma point.
*NSF-MRSEC DMR-1720595, NSF-DMR 1808751, Welch foundation F-1672, US Airforce FA2386-18-1-4097, DOE DE-AC02-05-CH11231, MOST-107-2112-M-009-024-MY3 and MOST-108-2119-M-009-011-MY3
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Presenters
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Woojoo Lee
- Physics, University of Texas at Austin
- Department of Physics, The University of Texas at Austin