Interfacial crystal Hall effect reversible by ferroelectric polarization

Recently, an anomalous Hall effect (AHE) has been predicted to occur in collinear bulk antiferromagnets with a non-centrosymmetric non-magnetic sublattice, coined the crystal Hall effect (CHE). The CHE may be interesting for application in spintronics due to its reversal with switching the non-magnetic sublattice, provided that suitable means for realizing this property are found. Here, we predict the appearance of the CHE in heterostructures composed of compensated antiferromagnetic metals and non-magnetic insulators due to reduced symmetry at the interface. We further show that such an interfacial crystal Hall effect (ICHE) can be made reversible in engineered heterostructures where an antiferromagnetic layer is sandwiched between two identical ferroelectric layers. We explicitly demonstrate these phenomena using density functional theory calculations for three heterostructure systems based on realistic materials. Our predictions open a new perspective for spintronics where the AHE can be reversed by an electric field.