Characterization of ferroelectric α-In2Se3 field-effect transistors
ORAL
Abstract
We report the study of field-effect transistors (FETs) composed of a ferroelectric van der Waals channel material, α-In2Se3, sandwiched between a SiO2 back-gate and an h-BN top-gate. We mechanically exfoliated 20-70 nm α-In2Se3 flakes and transferred them onto 300 nm SiO2/doped Si substrates, which have pre-patterned Au electrodes. The channel materials were capped by 30-40 nm h-BN, and we transferred multi-layer graphene flakes to the top of h-BN as the top gate electrode. We then characterized the source-drain current-voltage relation (ID-VD) and transfer characteristic (ID-VG) at 300 K. We have switched the channel conduction by over 2x104 using the SiO2 back-gate and 3x103 using the h-BN top gate. The transfer curve shows a clockwise hysteresis, which can be attributed to interfacial adsorbates such as water. We will also discuss the effects of the α-In2Se3 intrinsic polarization, layer thickness of the channel and gate materials, and the environmental factors on the switching characteristics of the FET devices.
*This work was primarily supported by the U.S. DOE, BES, Award # DE-SC0016153.
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Presenters
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Hanying Chen
- University of Nebraska - Lincoln