Towards quantum communication nodes using nuclear spins in silicon carbide electronics

ORAL

Abstract

An aspiration for quantum communication is to combine high quality photonic interfaces with quantum memories. The neutral divacancy (VV0) in silicon carbide (SiC) combines both of these attributes in a material compatible with scalable semiconductor technologies. Here, we demonstrate high fidelity initialization (>99%) and gates (99.984%), as well as extended dephasing (40x improvement) and decoherence (>14 ms) times in this system. We then use a single VV0 to control nearby nuclear spins with both large and small hyperfine couplings. This creates a multi-register system where electron spins can be entangled with nuclear memories. We discuss how choosing optimal isotopic concentration can maximize the number of available and controllable nuclear spins. Finally, we embed this quantum system into p-i-n diodes. This simple integration allows us to engineer a spin-photon interface which is spectrally narrow (~20 MHz) and widely tunable (~1 THz). These advances open the door to using spins in classical semiconductor devices as building blocks for scalable quantum communication nodes.

References:
A. Bourassa*, C. P. Anderson* et al., Nat. Mat. (2020) [arXiv:2005.07602]
C. P. Anderson*, A. Bourassa* et al., Science 366, 6470, 1225-1230 (2019)

*Supported by AFOSR, DARPA, NSF, ONR, VR, KAW

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Presenters

  • Alexandre Bourassa

    • Pritzker School of Molecular Engineering, University of Chicago
    • University of Chicago

Authors

  • Alexandre Bourassa

    • Pritzker School of Molecular Engineering, University of Chicago
    • University of Chicago

  • Christopher Anderson

    • Pritzker School of Molecular Engineering, University of Chicago
    • Pritzker School for Molecular Engineering, University of Chicago
    • University of Chicago

  • Kevin Miao

    • Pritzker School of Molecular Engineering, University of Chicago
    • University of Chicago

  • Mykyta Onizhuk

    • University of Chicago
    • Pritzker School of Molecular Engineering, University of Chicago

  • He Ma

    • Department of Chemistry, University of Chicago
    • Pritzker School of Molecular Engineering, University of Chicago
    • University of Chicago

  • Gary Wolfowicz

    • Argonne National Lab
    • Argonne National Laboratory, Center for Molecular Engineering and Materials Science Division
    • Center for Molecular Engineering, Materials Science Division, Argonne National Laboratory
    • Argonne National Laboratory, Argonne

  • Alexander Crook

    • Pritzker School of Molecular Engineering, University of Chicago
    • Department of Physics, University of Chicago

  • Peter J Mintun

    • Pritzker School of Molecular Engineering, University of Chicago

  • Hiroshi Abe

    • National Institutes for Quantum and Radiological Science and Technology
    • National Institutes for Quantum and Radiological Science and Technology (QST)

  • Jawad Ul-Hassan

    • Department of Physics, Chemistry and Biology, Linköping University

  • Nguyen T Son

    • Department of Physics, Chemistry and Biology, Linköping University

  • Takeshi Ohshima

    • National Institutes for Quantum and Radiological Science and Technology
    • National Institutes for Quantum and Radiological Science and Technology (QST)

  • Giulia Galli

    • The University of Chicago
    • Pritzker School of Molecular Engineering, The University of Chicago
    • Pritzker School of Molecular Engineering, University of Chicago
    • University of Chicago
    • Department of Chemistry, University of Chicago
    • Materials Science Division and Center for Molecular Engineering, Argonne National Laboratory

  • David Awschalom

    • University of Chicago
    • Pritzker School of Molecular Engineering, University of Chicago
    • Pritzker School for Molecular Engineering, University of Chicago
    • Center for Molecular Engineering, Materials Science Division, Argonne National Laboratory