Towards the synthesis of MAX phases by Atomic Layer Deposition (ALD)

MAX phases are polycrystalline nanolaminates of ternary carbides and nitrides with specific stoichiometry and layered structure, which exhibit unique combinations of properties of metallic materials and ceramics.^[1] However, so far, there is no simple approach to successfully deposit MAX phases on conventional substrates. In this regard, Atomic Layer Deposition (ALD) method could represent a suitable choice for fabricating these materials layer-by-layer, in a bottom-up approach, by controlling with atomic scale precision the growth of the film. Following this innovative strategy, here we present the synthesis and characterization of Ti₂GaN films grown on SiO₂/Si substrates, at various temperatures and starting from several precursors. Analysis of the stoichiometry and chemical composition over the whole thickness of the films shows that the ALD method holds promise for the preparation of a new class of MAX phases with specific and controllable properties.

[1] M. Barsoum and T. El-Raghy, American Scientist 89, 334 (2001).