Photodissociation of SiO

Silicon monoxide (SiO) rovibrational photodissociation cross sections have been computed using ab initio derived potential curves and electric transition dipole moment functions adjusted to match asymptotic experimental constraints where available. Photodissociation through transitions from nearly the full range of bound levels of the X ¹∑⁺ ground electronic state to excited electronic states of SiO is considered. State-resolved cross sections including predissociative channels have been computed for absorption of photons with wavelengths ranging from 500 Å to threshold. Photodissociation of SiO molecules in local thermal equilibrium at temperatures ranging from 1,000 to 10,000 K is explored. Cross sections are applied to compute photodissociation rates and rate fits for the molecule in the standard interstellar and black-body radiation fields.