Tuning supercurrent in Josephson field effect transistors using h-BN dielectric: Part 2, Characterization
POSTER
Abstract
Josephson junction field effect transistors (JJ-FET) based on semiconductor weak-links can provide voltage-controlled supercurrent. Conventionally high-K dielectrics such as AlOx are used on FETs or JJ-FETS, here we introduce h-BN as an alternative gate dielectric for epitaxial Al/InAs JJ-FETs. This could solve several niche difficulties: 1. Reducing surface chemistry and defect formation. 2. Prevents microwave absorption. 3. Find use as a tunnel barrier. We investigate the Josephson properties of JJ-FETs fabricated with thin h-BN flakes (5 nm - 10 nm) and show high transparency of JJ-FET from epitaxial contacts are preserved. We also find that the product of normal resistance, Rn and critical current, Ic, is comparable for devices with hBN and AlOx dielectrics. However we observe differences in normal resistance of the junctions that suggest surface chemistry has not been affected by hBN compared to AlOx.
Presenters
-
Fatemeh Barati
- New York Univ NYU
- Center for Quantum Phenomena, Department of Physics, New York University
- Department of Physics, New York University
- University of California, Riverside