Light-Induced Static Magnetization: Nonlinear Edelstein Effect

POSTER

Abstract

We theoretically and computationally demonstrate that static magnetization can be generated under light illumination via nonlinear Edelstein effect (NLEE). NLEE is applicable to semiconductors under both linearly and circularly polarized light, and there are no constraints from either spatial inversion or time-reversal symmetry. Remarkably, magnetization can be induced under linearly polarized light in nonmagnetic materials. With ab initio calculations, we reveal several prominent features of NLEE. We find that the orbital contributions can be significantly greater than the spin contributions. And magnetization with various orderings, including anti-ferromagnetic, ferromagnetic, etc., are all realizable with NLEE, which may facilitate many applications, such as unveiling hidden physical effects, creating a spatially varying magnetization, or manipulating the magnetization of anti-ferromagnetic materials. The relationship between NLEE and other magneto-optic effects, including the inverse Faraday effect and inverse Cotton-Mouton effect, is also discussed.

*This work was supported by an Office of Naval Research MURI through grant #N00014-17-1-2661.

Presenters

  • Haowei Xu

    • Massachusetts Institute of Technology MIT

Authors

  • Haowei Xu

    • Massachusetts Institute of Technology MIT
  • Jian Zhou

    • Massachusetts Institute of Technology MIT
  • Hua Wang

    • Massachusetts Institute of Technology MIT
  • Ju Li

    • Massachusetts Institute of Technology MIT
    • Department of Nuclear Science and Engineering, Massachusetts Institute of Technology