Electric Field-Induced Charge Carrier Density Driven Metal-to-Insulator Phase Transition in Few-Layered As-bP Field-effect Transistor
ORAL
Abstract
Metal-to-insulator phase transitions (MIT) in 2D Systems is a controversial topic in condensed matter physics due to the fact that it challenges the prediction made by Abrahams et al., which states that two-dimensional disordered electronic systems must be insulating (Phys. Rev. Lett. 42, 673 (1979)). Recent studies1,2 have indicated a possible MIT in few-layered transition metal dichalcogenide such as MoS2, ReS2 and CuIn7Se113, but the mechanism leading to the MIT still remains enigmatic. We will present a possible MIT in few-layered As-doped black phosphorus from conductivity measurements in field effect transistors measured from 300 K to 2 K reveal an insulating-to-metallic-like phase transition when the carrier density is tuned via an applied gate voltage. The nature of the phase transition will be discussed with existing theoretical model. 1Nat Commun. 2018; 9: 2052, 2 Nano Lett. 2015, 15, 12, 8377, 3ACS Nano 2019, 13, 11, 13413
*Center for Nanoscale Materials at Argonne National Lab, a U.S. Department of Energy (DOE) Office of Science User Facility, and supported by Contract No. DE-AC02-06CH11357. NSF-PREM NSF-DMR #1826886, HBCU-UP EiR NSF DMR # 1900692 and NSF-DMR # 1807969. National High Magnetic Field Laboratory, supported by NSF DMR-1644779 and the State of Florida.
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Presenters
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Nihar Pradhan
- Department of Chemistry, Physics and Atmospheric Science, Jackson, MS, USA, Jackson State University
- Physics, Jackson State University