Studying Strain Dependence of Electronic and Structural Phases in Tantalum Disulfide

ORAL

Abstract

Tantalum Disulfide (TaS2) belongs to the family of transition metal dichalcogenides studied for its potential in nanoelectronics, photonics, and energy storage. TaS2 exists in several phases with differing functional electronic properties whose stability can be tuned with strain, pressure, and synthesis conditions. In this talk, I will discuss the structural and electronic phase diagram of 1T and 2H phases of TaS2 with the application of pressure and strain using Density Functional Theory. I will discuss how strain can be used to tune both the structural and electronic phases, focusing on how changes in the Fermi surface topology can influence the formation of charge density waves. Finally, I will speak to how our theoretical predictions connect to experimental transport measurements of 1T and 2H phases at various applied strains, using it to map changes in the electronic properties and the Fermi surface of the material.

*This work was supported by the Gordon and Betty Moore Foundation EPiQS Initiative through Grant No. GBMF9067

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Presenters

  • Susana Torres-Londono

    • University of California, Berkeley

Authors

  • Susana Torres-Londono

    • University of California, Berkeley

  • Shannon Haley

    • University of California, Berkeley

  • Meera Aravinth

    • University of California, Berkeley

  • Sophie Weber

    • University of California, Berkeley

  • James Analytis

    • University of California, Berkeley
    • University of California at Berkeley
    • Physics, University of California, Berkeley

  • Sinead Griffin

    • Lawrence Berkeley National Laboratory
    • Molecular Foundry and Materials Sciences Divisions, Lawrence Berkeley National Laboratory