Observation of carrier concentration dependent spintronic terahertz emission from <i>n</i>-GaN/NiFe heterostructures
ORAL
Abstract
The development of terahertz (THz) spintronics has created a paradigm shift in the generation of THz radiation through the combination of ultrafast magnetism and spin-based electronics. However, research in this area has primarily focused on all-metallic devices comprising a ferromagnetic thin film adjacent to a non-magnetic heavy metal. Here, we report the experimental observation of spintronic THz emission from an n-doped wide bandgap semiconductor, n-GaN. We found that the amplitude of THz emission strongly depends on the carrier concentration of the semiconductor layer, which could be attributed to the tunable Rashba state occurring at the n-GaN/ferromagnet interface. Our work offers exciting prospects for pursuing wide bandgap semiconductor-based spintronic THz devices and demonstrating their intriguing spin Hall physics at the ultrafast timescale.
*D.S. acknowledges support from the National Science Foundation, No. ECCS-1933297, and NC State University Nagoya Research Collaboration Grant. M.B., D.S., and K.G. acknowledge support from ROI from the UNC system. P.R., R.K., Z.S., and R.C. acknowledge partial support from the National Science Foundation (Nos. ECCS-1916800, ECCS-1610992, and ECCS-1653383) and the Air Force Office of Scientific Research (AFOSR) (No. FA-95501710225).
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Presenters
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Eric Vetter
- Materials Science and Engineering, North Carolina State University
- Physics, Oakland University