Enhanced Tunneling Electroresistance in MoS<sub>2</sub>-Hf<sub>0</sub>.<sub>5</sub>Zr<sub>0</sub>.<sub>5</sub>O<sub>2</sub>-W Heterojunctions

ORAL

Abstract

A reproducibly large tunneling electroresistance (TER) effect resulting from the ferroelectric (FE) polarization reversal is of the great importance for the development of efficient ferroelectric tunnel junctions (FTJs). Recently, it has been demonstrated that incorporation of a semiconducting electrode into the FTJ allowed enhancement of the TER magnitude by several orders of magnitude. Here, we report the polarization-controlled TER of up to 105 % in Hf0.5Zr0.5O2 (HZO) based FTJs employing 2D MoS2 as a top electrode. The resistive switching effect induced by polarization reversal could be explained by the Fowler-Nordheim tunneling mechanism. Enhancement of the TER effect stems from the polarization-mediated accumulation or depletion of the electrons at the MoS2/HZO interface that alters the effective barrier profile seen by the conduction electrons. The obtained results may facilitate fabrication of high performance non-volatile resistive memory devices for information storage systems.

*This work was supported by the National Science Foundation through the Nebraska Materials Research Science and Engineering Center (MRSEC, grant DMR-1420645) and grant ECCS-1917635.

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Presenters

  • Pradeep Chaudhary

    • University of Nebraska - Lincoln

Authors

  • Pradeep Chaudhary

    • University of Nebraska - Lincoln

  • Pratyush P Buragohain

    • University of Nebraska - Lincoln

  • Anastasia Chouprik

    • Moscow Institue of Physics and Technology

  • Alexey Lipatov

    • University of Nebraska - Lincoln

  • Alexander Sinitskii

    • Department of Chemistry, University of Nebraska - Lincoln
    • University of Nebraska - Lincoln
    • Department of Chemistry, University of Nebraska-Lincoln

  • Andrei Zekenvich

    • Moscow Institue of Physics and Technology

  • Alexei Gruverman

    • University of Nebraska - Lincoln