Thermal and electrical transport behavior of topological insulator ZrTe<sub>5</sub>

ORAL

Abstract

We report a study of electric, thermoelectric, thermodynamic measurements and angle resolved photoemission spectroscopy (ARPES) of single crystals of topological insulator candidate ZrTe5 grown by both chemical vapor transport and flux method. The transport response is characteristic of a small gap semiconductor with band parameters consistent with those observed by ARPES. The thermoelectric response shows a significant enhancement in magnetic field and unconventional behavior in the quantum limit. We discuss the possible mechanisms underlying these observations in the context of the band properties deduced from our probes of fermiology.

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Presenters

  • Junbo Zhu

    • Massachusetts Institute of Technology MIT
    • Physics, Massachusetts Institute of Technology

Authors

  • Junbo Zhu

    • Massachusetts Institute of Technology MIT
    • Physics, Massachusetts Institute of Technology

  • Changmin Lee

    • Lawrence Berkeley National Laboratory
    • Massachusetts Institute of Technology MIT

  • Takehito Suzuki

    • Massachusetts Institute of Technology, Department of Physics, Cambridge, MA, USA
    • Massachusetts Institute of Technology MIT
    • Massachusetts Institute of Technology

  • Shiang Fang

    • Rutgers University
    • Department of Physics and Astronomy, Rutgers University
    • Department of Physics, Rutgers

  • Nuh Gedik

    • Massachusetts Institute of Technology MIT
    • Massachusetts Institute of Technology

  • Joseph Checkelsky

    • Massachusetts Institute of Technology, Department of Physics, Cambridge, MA, USA
    • Massachusetts Institute of Technology MIT
    • Department of Physics, Massachusetts Institute of Technology
    • Massachusetts Institute of Technology
    • Physics, Massachusetts Institute of Technology