Tuning the band structure of monolayer WTe2 using back-gating in STM
ORAL
Abstract
Two-dimensional (2D) transition metal dichalcogenides are exciting systems potentially realizing toplogically protected edge states, topological superconductivity, and strong electron correlation physics. Monolayer 1T'-WTe2 has been demonstrated to be a time-reversal-invariant 2D topological insulator that becomes a superconductor upon doping. Atomically-resolved scanning tunneling microscopy (STM) confirmed clear edge states on WTe2 monolayer islands. Here, we report an STM study of back-gated monolayer 1T'-WTe2. Along with topographical images, we present scanning tunneling spectroscopy of monolayer islands, performed while tuning the out-of-plane electric field and carrier concentration. The monolayer band structure and the edge states evolve in response to doping and back-gating. We use first principle calculations to explain the observed effects.
*The STM studies were supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering under Award #DE-SC0014335, and in part by the Gordon and Betty Moore Foundation’s EPiQS Initiative through Grant GBMF4860.
–
Presenters
-
Yulia Maximenko
- University of Illinois Urbana-Champaign
- University of Illinois at Urbana-Champaign
- National Institute of Standards and Technology