Localization of Filaments in Resistive Switching Devices by Ion Irradiation
ORAL
Abstract
Resistive switching (RS) in transition metal oxides could find applications in a wide range of electronic devices, from conventional binary memories to artificial neurons and synapses for hardware-level neuromorphic computing. Often, the RS occurs by the formation of low-resistance filaments that percolate between the device electrodes. Because the filaments appear at different locations and follow different paths in different devices, the device-to-device variability could be very large. This presents a serious challenge for building large-scale RS circuits. In this talk, we introduce a novel approach of using focused ion beam irradiation to “guide” the filament formation. We use the RS in vanadium oxides as a case study. We show that both the position and the shape of the filament could be controllably adjusted by a relatively low dose of Ga+ ion irradiation. Our work demonstrates that local irradiation is an efficient tool for fine-tuning the RS properties, which could provide a general solution in solving the device-to-device variability problem.
*Work supported by the Quantum Materials for Energy Efficient Neuromorphic Computing an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences under Award # DE-SC0019273.
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Presenters
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Nareg Ghazikhanian
- Materials Science and Engineering, University of California, San Diego
- Department of Physics, University of California San Diego