Modulation doping in RuCl<sub>3</sub> heterostructures

 · Invited

Abstract

Two-dimensional (2d) nano-electronics, plasmonics, and emergent phases require clean and local charge control, calling for layered, crystalline acceptors or donors. Here, we demonstrate that the large work function narrow-band Mott insulator RuCl3 enables modulation doping of exfoliated single and bilayer graphene, chemical vapor deposition (CVD) grown graphene and WSe2, and molecular beam epitaxy (MBE) grown EuS. OurRaman measurements show high hole densities 3*1013cm-2 in mlg RuCl3 heterostructures and 6*1013cm-2 in bilayer graphene (blg) RuCl3 heterostructures. In addition, our study suggest photovoltage devices, charge transfer control via twist angle, and charge transfer through hexagonal boron nitride (hBN).

*Y.W. and K.S.B. are supported by the ONR under Award number N00014-20-1-2308. J.B. and E.A.H. acknowledge support under National Science Foundation Grant no.\ DMR-1810305, and with L.Y. acknowledge support from the Institute of Materials Science \& Engineering at Washington University in St.\ Louis. X.L. and L.Y. are supported by the NSF CAREER Grant no.\ DMR-1455346 and the Air Force Office of Scientific Research Grant no.\ FA9550-17-1-0304. DGM acknowledges support from the Gordon and Betty Moore Foundation’s EPiQS Initiative, Grant GBMF9069. M.G. and N.K. was supported by supported by theDOE, Office of Science, Office of Basic Energy Sciences under award no.\ DE-SC0018675. E.-A.K. was supported by the NSF (Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials under Cooperative Agreement no.\ DMR-1539918 and E.G. was supported by the Cornell Center for Materials Research with funding from the NSF MRSEC program (DMR-1719875). D.S. and J.S.M. were su

–

Presenters

  • Yiping Wang

    • Physics, Boston University
    • Boston College
    • Physics, Boston College

Authors

  • Yiping Wang

    • Physics, Boston University
    • Boston College
    • Physics, Boston College