Large light-induced modulation of the Metal Insulator Transition in photoconductor/Mott heterostructures
ORAL
Abstract
Some Mott insulators exhibit a metal-to-insulator transition (MIT) across which the electrical resistance shows large changes. Modification of the electrical transport with an electric field has been extensively investigated and its use in emerging applications such as neuromorphic computing and voltage controlled optoelectronics seems very promising. Here we investigate the modification of the transport properties with light. We have discovered large effects using heterostructures consisting of a photoconductor CdS, film on top of ultrathin layers of the archetypal Mott insulators: VO2 or V2O3. For CdS/VO2, we observed a non-volatile light induced modulations of the MIT resulting in resistance changes of up to 3 orders of magnitude. On the other hand, for the CdS/V2O3 bilayer, we found a volatile light-induced modulations of the transition temperature (TMIT) of ~140 K, with resistance changes as large as 6 orders of magnitude. We will discuss the possible physical origin of this interesting effect.
*Work supported by the Quantum Materials for Energy Efficient Neuromorphic Computing an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences under Award # DE-SC0019273.
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Presenters
Henry Navarro
Department of Physics, University of California, San Diego
Department of Physics, University of California San Diego
Authors
Henry Navarro
Department of Physics, University of California, San Diego
Department of Physics, University of California San Diego
Javier del Valle
Department of Quantum Matter Physics, University of Geneva
University of Geneva
Univ of Geneva
Yoav Kalcheim
Faculty of Materials Science and Engineering, Technion - Israel Institute of Technology
Faculty of Materials Science and Engineering, Technion-Israel Institute of Technology
Technion - Israel Institute of Technology
Technion-Israel Institute of Technology
University of California, San Diego
Nicolas M Vargas
Department of Physics, University of California, San Diego
University of California, San Diego
Department of Physics, University of California San Diego
Coline Adda
University of California, San Diego
Department of Physics, University of California, San Diego
Department of Physics, University of California San Diego
Minhan Lee
Materials Science and Engineering Program, University of California, San Diego
Department of Physics, University of California, San Diego
University of California, San Diego
Department of Physics, University of California San Diego
Pavel Lapa
Department of Physics and Center for Advanced Nanoscience, University of California, San Diego
Department of Physics, University of California, San Diego
Materials Science Division, Argonne National Laboratory
Alberto Rivera
Universidad Complutense de Madrid
Departamento de Física de Materiales, Universidad Complutense de Madrid
Física de Materiales, Universidad Complutense de Madrid
Ivan Zaluzhnyy
University of California, San Diego
Department of Physics, University of California, San Diego
Erbin Qiu
Department of Physics, University of California, San Diego
Oleg Shpyrko
University of California, San Diego
Department of Physics, University of California, San Diego
Marcelo Rozenberg
Laboratoire de Physique des Solides, Université Paris Saclay
CNRS
Laboratoire de Physique des Solides, CNRS
Université Paris-Saclay
Alex Frano
University of California, San Diego
University of California San Diego
Department of Physics, University of California, San Diego
Ivan Schuller
University of California, San Diego
Dept. of Physics and Center for Advanced Nanoscience, UCSD, La Jolla, CA, USA
Physics Department, University of California, San Diego
Department of Physics, University of California, San Diego