Coulomb drag between quantum wires in the quasi-1D regime

ORAL

Abstract

We report Coulomb drag measurements in laterally-coupled single layer GaAs/AlGaAs quantum wires, enabling in situ tuning of their effective interwire separation. The drag resistance RD exhibits the standard modulation as the wires’ subband occupancy is varied. We mapped the temperature dependence of RD as a function of both subband occupancy and interwire separation in the quasi-1D regime were more than a single 1D subband is occupied. The qualitative and quantitative functional shape of this dependence is utilized to determine the parametric evolution of the dominant drag inducing scattering mechanism and of the strength of electron-electron interactions, respectively.

*This work was performed, in part, at CINT, an Office of Science (OoS) User Facility operated for the U.S. DOE OoS. SNL is a multimission laboratory managed and operated by NTESS, LLC, a wholly owned subsidiary of Honeywell International, Inc., for the U.S. DOE’s NNSA under contract DE-NA-0003525. The views expressed in the article do not necessarily represent the views of the U.S. DOE or the United States Government.

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Presenters

  • Rebika Makaju

    • University of Florida

Authors

  • Rebika Makaju

    • University of Florida

  • Harith Kassar

    • University of Florida

  • John L. Reno

    • Center for Integrated Nanotechnologies, Sandia National Laboratorie
    • Sandia National Laboratories, Albuquerque, New Mexico, USA

  • Dominique Laroche

    • University of Florida
    • Department of Physics, University of Florida