Voltage Control of Magnetism Enabled by Resistive Switching

ORAL

Abstract

Application of a strong electric stimulus, voltage or current, to ferromagnetic (FM) oxide (La,Sr)MnO3 (LSMO) triggers the metal-insulator transition producing a low- to high-state resistive switching. This switching occurs by the nucleation and growth of an insulating paramagnetic (PM) barrier perpendicular to the current flow, in contrast to conventional filamentary percolation parallel to the current. The voltage-induced barrier formation results in an unusual FM/PM/FM configuration leading to a dramatic change of magnetic anisotropy. Before the PM barrier nucleation, the devices have an easy-plane anisotropy showing nearly square hysteresis loops in any in-plane direction. After the barrier nucleation, the direction perpendicular to the barrier becomes the hard anisotropy axis, which is evidenced by the complete suppression of the remanence and coercivity and the strong enhancement of the saturation fields in the hysteresis loops. Our work shows that employing resistive switching is a viable strategy to achieve voltage-controlled magnetism.

*This research was supported by the U.S. Department of Energy’s Office of Basic Energy Science, DMR, under Grant DE FG02 87ER-45332.

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Presenters

  • Pavel Salev

    • Dept. of Physics and Center for Advanced Nanoscience, UCSD, La Jolla, CA, USA
    • Department of Physics, University of California, San Diego
    • University of California, San Diego

Authors

  • Pavel Salev

    • Dept. of Physics and Center for Advanced Nanoscience, UCSD, La Jolla, CA, USA
    • Department of Physics, University of California, San Diego
    • University of California, San Diego

  • Iana Volvach

    • University of California, San Diego

  • Dayne Sasaki

    • University of California, Davis

  • Lorenzo Fratino

    • Laboratoire de Physique des Solides, CNRS

  • Rani Berkoun

    • Laboratoire de Physique des Solides, CNRS

  • Pavel N. Lapa

    • University of California, San Diego

  • Javier del Valle

    • Department of Quantum Matter Physics, University of Geneva
    • University of Geneva
    • Univ of Geneva

  • Yoav Kalcheim

    • Faculty of Materials Science and Engineering, Technion - Israel Institute of Technology
    • Faculty of Materials Science and Engineering, Technion-Israel Institute of Technology
    • Technion - Israel Institute of Technology
    • Technion-Israel Institute of Technology
    • University of California, San Diego

  • Marcelo Rozenberg

    • Laboratoire de Physique des Solides, Université Paris Saclay
    • CNRS
    • Laboratoire de Physique des Solides, CNRS
    • Université Paris-Saclay

  • Yayoi Takamura

    • Department of Materials Science and Engineering, University of California, Davis
    • University of California, Davis

  • Vitaliy Lomakin

    • University of California, San Diego

  • Ivan Schuller

    • University of California, San Diego
    • Dept. of Physics and Center for Advanced Nanoscience, UCSD, La Jolla, CA, USA
    • Physics Department, University of California, San Diego
    • Department of Physics, University of California, San Diego