Wafer-scale electrically tunable quantum nodes in silicon carbide

ORAL

Abstract

Defect spin qubits in silicon carbide (SiC) with associated nuclear spin quantum memories [1] can leverage near-telecom emission and wafer-scale semiconductor device engineering [2] for creating quantum technologies. Here, we highlight recent advances with the neutral divacancy (VV0) in SiC within the context of long-distance quantum communication and repeater schemes. We isolate single VV0 defects in functional SiC optoelectronic devices, which allows for deterministic charge state control and terahertz tuning, but also surprisingly eliminates spectral diffusion in the optical structure of these defects. This results in lifetime-limited single-photon emission through semiconductor depletion which offers a generalizable strategy for quantum emitters limited by charge noise. We further discuss the outlook for electrical control, manipulation, and readout of both the spin and charge degrees of freedom in these spin qubits. Combined with the entanglement and control of nuclear spin registers, this work establishes a promising platform for quantum science.

References:
[1] A. Bourassa* and C. P. Anderson* et al., Nature Materials (2020) [arXiv:2005.07602]
[2] C. P. Anderson* and A. Bourassa* et al., Science 366, 6470, 1225-1230 (2019)

*Supported by AFOSR, DARPA, NSF, ONR, VR, KAW

Presenters

  • Christopher Anderson

    • Pritzker School of Molecular Engineering, University of Chicago
    • Pritzker School for Molecular Engineering, University of Chicago
    • University of Chicago

Authors

  • Christopher Anderson

    • Pritzker School of Molecular Engineering, University of Chicago
    • Pritzker School for Molecular Engineering, University of Chicago
    • University of Chicago
  • Alexandre Bourassa

    • Pritzker School of Molecular Engineering, University of Chicago
    • University of Chicago
  • Kevin Miao

    • Pritzker School of Molecular Engineering, University of Chicago
    • University of Chicago
  • Mykyta Onizhuk

    • University of Chicago
    • Pritzker School of Molecular Engineering, University of Chicago
  • He Ma

    • Department of Chemistry, University of Chicago
    • Pritzker School of Molecular Engineering, University of Chicago
    • University of Chicago
  • Gary Wolfowicz

    • Argonne National Lab
    • Argonne National Laboratory, Center for Molecular Engineering and Materials Science Division
    • Center for Molecular Engineering, Materials Science Division, Argonne National Laboratory
    • Argonne National Laboratory, Argonne
  • Alexander Crook

    • Pritzker School of Molecular Engineering, University of Chicago
    • Department of Physics, University of Chicago
  • Peter J Mintun

    • Pritzker School of Molecular Engineering, University of Chicago
  • Hiroshi Abe

    • National Institutes for Quantum and Radiological Science and Technology
    • National Institutes for Quantum and Radiological Science and Technology (QST)
  • Jawad Ul-Hassan

    • Department of Physics, Chemistry and Biology, Linköping University
  • Nguyen T Son

    • Department of Physics, Chemistry and Biology, Linköping University
  • Takeshi Ohshima

    • National Institutes for Quantum and Radiological Science and Technology
    • National Institutes for Quantum and Radiological Science and Technology (QST)
  • Giulia Galli

    • The University of Chicago
    • Pritzker School of Molecular Engineering, The University of Chicago
    • Pritzker School of Molecular Engineering, University of Chicago
    • University of Chicago
    • Department of Chemistry, University of Chicago
    • Materials Science Division and Center for Molecular Engineering, Argonne National Laboratory
  • David Awschalom

    • University of Chicago
    • Pritzker School of Molecular Engineering, University of Chicago
    • Pritzker School for Molecular Engineering, University of Chicago
    • Center for Molecular Engineering, Materials Science Division, Argonne National Laboratory