High-pressure electronic phase diagrams in FeSe<sub>1-<i>x</i></sub>Te<i><sub>x</sub></i>

ORAL

Abstract

FeSe has attracted much attention because it has a nonmagnetic nematic order. When selenium is substituted by the isovalent element, sulfur, a nematic quantum critical point without magnetism appears. In this respect, FeSe-based materials have been a unique platform for studying the relationship between the nematic phase and the superconductivity. However, in FeSe1-xSx, it has been reported that the superconducting properties abruptly change at the nematic end point (x = 0.17) and therfore understanding the role of the nematic fluctuations in superconductivity is complicated.
In this study, we focus on FeSe1-xTex in which selenium is substituted by tellurium. We have synthesized bulk single crystals of FeSe1-xTex (0 < x < 0.55) by using the chemical vapor transport method. The temperature dependence of the electrical resistivity was measured on the FeSe1-xTex crystals under pressure up to 8 GPa. As a result, we have established the three-dimensional electronic phase diagram; temperature against pressure and Te-substitution. In the obtained phase diagram, the superconducting dome emerges close to the nematic phase and far from the magnetic phase, implying that the nematic fuctuations can enhance superconducting transition temperature in this system.

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Presenters

  • Kiyotaka Mukasa

    • Department of Advanced Materials Science, The University of Tokyo

Authors

  • Kiyotaka Mukasa

    • Department of Advanced Materials Science, The University of Tokyo

  • Kohei Matsuura

    • Department of Advanced Materials Science, The University of Tokyo

  • Mingwei Qiu

    • Department of Advanced Materials Science, The University of Tokyo

  • Mikihiko Saito

    • Department of Advanced Materials Science, The University of Tokyo

  • Yuichi Sugimura

    • Department of Advanced Materials Science, The University of Tokyo
    • Dept. Adv. Mat. Sci., Univ. Tokyo

  • Muku Otani

    • Department of Advanced Materials Science, The University of Tokyo

  • Kousuke Ishida

    • Department of Advanced Materials Science, The University of Tokyo
    • Department of Advanced Materials Science, the University of Tokyo

  • Yugo Onishi

    • Department of Applied Physics, The University of Tokyo

  • Yuta Mizukami

    • Department of Advanced Materials Science, The University of Tokyo

  • Kenichiro Hashimoto

    • Department of Advanced Material Science, University of Tokyo
    • Department of Advanced Materials Science, University of Tokyo
    • Department of Advanced Materials Science, The University of Tokyo

  • Jun Gouchi

    • Institute for Solid State Physics, University of Tokyo
    • Institute for Solid State Physics, The University of Tokyo
    • University of Tokyo

  • Reiji Kumai

    • Institute of Materials Structure Science, High Energy Accelerator Research Organization

  • Yoshiya Uwatoko

    • Institute for Solid State Physics, University of Tokyo
    • Institute for Solid State Physics, The University of Tokyo
    • University of Tokyo

  • Takasada Shibauchi

    • Department of Advanced Material Science, University of Tokyo
    • Department of Advanced Materials Science, University of Tokyo
    • Department of Advanced Materials Science, The University of Tokyo
    • Dept. Adv. Mat. Sci., Univ. Tokyo
    • Univ of Tokyo-Kashiwanoha
    • Department of Advanced Materials Science, the University of Tokyo