Identifying Non-centrosymmetric Electronic Structures of Defect in Tungsten Ditelluride
ORAL
Abstract
WTe2 is a transition metal dichalcogenide with novel electronic structures. Because defects in WTe2 can affect its properties, a precise classification of defects is required to help understand the possible influence beyond them. By using scanning tunneling microscope (STM) and density functional theory (DFT) calculation, we investigated both geometric and electronic structures of the defects in WTe2. We revealed non-centrosymmetric electronic structures near the Te defects. Furthermore, each type of defect show unique interference patterns, significantly identifying four types of defects at both the bottom and top sides. These findings confirm that the observation of interference pattern is a feasible method to characterize the defects in layered materials.
*This work was financially supported by the 'Center for the Semiconductor Technology Research' from The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education in Taiwan. Also supported by the 'Center of Low-Dimensional and Frontier Quantum Materials' of National Chiao Tung University. Also supported in part by the Ministry of Science and Technology, Taiwan, under Grant MOST-109-2634-F-009-029 and MOST-108-2112-M-009-012.
–
Presenters
-
Wan-Hsin Chen
- Department of Electrophysics, Natl Chiao Tung Univ