Filament dynamics in the voltage-driven insulator-to-metal transition
ORAL
Abstract
Certain correlated oxides feature an insulator-to-metal transition which can be triggered by applying an external voltage: the material becomes conducting if a threshold electric field is exceeded. This phenomenon is known as voltage-driven IMT, and it has very promising applications in emerging technologies such as optoelectronics and neuromorphic computing. While it is known that this process takes place in a filamentary way, it is not yet known how these filaments nucleate, grow and relax. We combine reflectivity and transport measurements to image metallization with spatial and temporal resolution. Five correlated oxides from two different families are analyzed: VO2, V2O3, V3O5, NdNiO3 and SmNiO3, finding remarkable differences in the filament expansion process. By comparing these systems and with the insight of numerical simulations, we identify the key parameters that govern the dynamics of the voltage-driven IMT.
*The nickelate research was done at the University of Geneva and supported by the SNSF through an Ambizione Fellowship (#PZ00P2_185848), while the vanadate research was done at UCSD and supported by the Q-MEEN-C Energy Frontier Research Center, funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences (# DE-SC0019273).
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Presenters
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Javier del Valle
- Department of Quantum Matter Physics, University of Geneva
- University of Geneva
- Univ of Geneva