Influence of Quantum Dot Morphology on the Optical Properties of GaSb/GaAs Multilayers
ORAL
Abstract
We examine the influence of quantum dot (QD) morphology on the optical properties of two-dimensional (2D) GaSb/GaAs multilayers, with and without three-dimensional nanostructures. Using nanostructure sizes from scanning transmission electron microscopy and local Sb compositions from local-electrode atom-probe tomography as input into self-consistent Schrodinger–Poisson simulations based on 8 x 8 kp theory, we compute confinement energies for GaSb QDs, circular arrangements of smaller QDs, termed QD-rings, and 2D layers on GaAs substrates. The computed confinement energies and the measured photoluminescence emission energies increase from QDs to QD-rings to 2Dlayers, enabling direct association of nanostructure morphologies with the optical properties of the GaSb/GaAs multilayers. This work opens opportunities for tailoring near to far infrared optoelectronic devices by varying the QD morphology.
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NSF Grant DGE 1256260
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Presenters
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Christian Greenhill
- Materials Science and Engineering, University of Michigan
- Department of Materials Science & Engineering, University of Michigan
- Department of Materials Science & Engineering, Northwestern University
- University of Michigan