Anomalous Hopping Conduction Discovered in N-Type a-Si

ORAL

Abstract

Historically, n-type amorphous silicon has been shown to obey a conductivity temperature dependence of ln σ ∝ 1/T, determiend by a semi-log Arrhenius plot. This work presents measurements of dark conductivity in amorphous silicon doped with high amounts of phosphine ([PH3]/[SiH4] = 0.01 - 0.03) and grown with argon dilution that have yielded an anomalous hopping conduction mechanism: ln σ ∝ 1/Tp where p ≈ 0.75, determined by Resistance Curve Derivative Analysis. A comparison between these results and historical data is presented.

*This work funded by a grant from Obsidian Sensors, an EvoNexus Incubator Company in San Diego, California.

–

Presenters

  • Brianna Western

    • Physics, University of North Texas

Authors

  • Brianna Western

    • Physics, University of North Texas

  • Michael Harcrow

    • Physics, University of North Texas

  • Athanasios J Syllaios

    • Physics, University of North Texas

  • Vincent C Lopes

    • Physics, University of North Texas

  • Christopher Littler

    • Physics, University of North Texas