Copper Defects and Charge Collection in Cadmium Telluride Photovoltaic Devices

In CdTe photovoltaic devices, the CdTe layer must be doped with Cu to reduce its resistivity, increase carrier lifetime, and improve hole transport. However, the Cu concentration is typically very low around the interfaces and within the CdTe layer, making it difficult to determine the influence Cu has on charge transport at the nanoscale; Cu concentrations are difficult to detect due to low ionization probability of Cu atoms [1]. Here, we use synchrotron X-ray microscopy to probe the nanoscale distribution of Cu and correlate it to local charge collection in CdTe photovoltaic devices. We demonstrate Cu segregation around grain boundaries, and, using cross-section charge collection measurements and transport modelling, show recombination center concentration in the CdTe layer dictates the interface at which charge collection occurs. The work gives insights on how Cu distributes in CdTe photovoltaic systems, and an understanding of how these distributions affect charge transport.

[1] Mao, Dan, et. al. "Correlative impurity distribution analysis in cadmium telluride (CdTe) thin-film solar cells by ToF-SIMS 2D imaging." Solar Energy Materials and Solar Cells 157 (2016): 65-73.