Charge-to-Spin Interconversion in Low-Symmetry Topological Materials
ORAL
Abstract
We theoretically show that the reduced symmetry of strong spin-orbit coupling materials such as MoTe2 or WTe2 enables a new form of oblique spin Hall effect (SHE), characterized by large and robust in-plane spin polarizations. Through quantum transport calculations on realistic device geometries, including disorder, we found long spin diffusion lengths (λs) and a gate tunable charge-to-spin interconversion efficiency with an upper value reaching θxy ∼ 80%. The SHE figure of merit λsθxy ∼ 1-50 nm, can significantly exceed values of conventional SHE materials, and stems from momentum invariant (persistent) spin textures together with large spin Berry curvature along the Fermi contour. Specific guidelines for unambiguous experimental confirmation are proposed, paving the way towards exploiting such phenomena in spintronic devices.
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Presenters
Marc Vila Tusell
Institut Català de Nanociència i Nanotecnologia (ICN2)
Authors
Marc Vila Tusell
Institut Català de Nanociència i Nanotecnologia (ICN2)
Chuang-Han Hsu
Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore
Institute of Physics, Academia Sinica, Taipei
Institute of Physics, Academia Sinica
Jose H. Garcia
Institut Català de Nanociència i Nanotecnologia (ICN2)
L. Antonio Benítez
Institut Català de Nanociència i Nanotecnologia (ICN2)
Xavier Waintal
Univ. Grenoble Alpes, CEA, IRIG-PHELIQS, 38000 Grenoble, France
Université Grenoble Alpes
CEA Grenoble
Université Grenoble Alpes, CEA, IRIG-PHELIQS, 38000 Grenoble, France
Sergio Valenzuela
Institut Català de Nanociència i Nanotecnologia (ICN2), ICREA
ICREA and Catalan Institute of Nanoscience and Nanotechnology
Vitor Manuel Pereira
Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore 117576, Singapore
Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore
Stephan Roche
ICREA–Institució Catalana de Recerca i Estudis Avançats, 08010 Barcelona, Spain
Institut Català de Nanociència i Nanotecnologia (ICN2), ICREA