Measurement of the out-of-plane g-factor in strained Ge/SiGe using single-hole quantum dots
ORAL
Abstract
Lithographically patterned quantum dots in strained Ge/SiGe have become promising candidates for quantum computing, with a quick progression to qubit logic demonstrations. Here we present an experimental measurement of the out-of-plane g-factor in this material for a single hole confined to a quantum dot, which avoids the strong orbital effects that can occur in this configuration. Strong asymmetry of the g-factor between the in- and out-of-plane directions is seen. These results are in agreement with calculations using the Luttinger Hamiltonian and suggest dramatic tunability through both the B-field and the charge state.
*This work was supported by the Laboratory Directed Research and Development Program at Sandia National Laboratories and was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE, Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multimission laboratory managed and operated by National Technology & Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International Inc., for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-NA0003525. The views expressed in the article do not necessarily represent the views of the DOE or the U.S. Government.
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Presenters
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Andrew J Miller
- Sandia National Laboratories