Highly efficient and stable flexible perovskite field-effect transistors

Flexible electronic devices are considered to be the technological basis of the internet of things. Via materials design and device interface engineering, the hole mobility of solution-processable perovskite field-effect transistors (PFETs) has been boosted up to over 10 cm² V^-1 s^-1, which makes PFETs promising for use as high-performance transistors in future displays and sensors.^[1] while high mobility values have been obtained on rigidity substrates, a new challenge is to develop high-performance PFETs on polymer substrates for flexible and wearable electronics.
Here we demonstrate a flexible lead-free PFETs incorporating π-conjugated oligothiophene ligand in the 2D perovskite lattice. We fabricated the flexible PFETs by using 125 µm thick polyimide substrate and obtained a hole mobility of ∼0.6 cm² V^-1 s^-1, which is the highest for the flexible PFETs. Moreover, the devices exhibited no significant changes in mobility after 50 bending cycles at a 10-mm bending radius. This work demonstrates the promising potential of perovskite materials for future applications in flexible electronic devices.
Reference
[1] T. Matsushima, S. Hwang, A. Sandanayaka, C. Qin, S. Terakawa, T. Fujihara, M. Yahiro, C. Adachi, Adv. Mater. 2016, 28, 10275-10281.