Hybrid III-V diamond photonic platform for quantum nodes based on neutral silicon vacancy centers in diamond

POSTER

Abstract

Integrating quantum memories based on color centers in diamond with on-chip photonic devices may enable entanglement distribution over long distances, but efforts towards integration have been challenging as color centers are sensitive to their environment and their properties degrade in nanofabricated structures[1]. We present a heterogeneously integrated, on-chip, III-V diamond platform designed for neutral silicon vacancy (SiV0) centers. The combination of stable optical transitions and long spin coherence times makes the SiV0 center an attractive candidate for nodes in quantum networks[2,3]. Our design does not require etching the diamond substrate, thus avoiding material damage and spectral diffusion arising from nanofabrication. Through evanescent coupling to SiV0 centers near the diamond surface, the platform can enable Purcell enhancement of SiV0 emission and quantum frequency conversion to the telecommunication C-band.

[1]Ruf, M., et al. Nano lett. 19.6 (2019):3987-3992
[2]Rose, B. C., et al. Science 361.6397 (2018):60-63
[3]Zhang, Z., et al. arXiv:2004.12544 (2020)

*This work was primarily supported by DARPA under Young Faculty Award(award number D18AP00047) and work on the neutral silicon vacancy center was supported by the NSF under the EFRI ACQUIRE program(grant 1640959)

Presenters

  • Alexander Abulnaga

    • Princeton University

Authors

  • Alexander Abulnaga

    • Princeton University

  • Ding Huang

    • Princeton University

  • Sacha Welinski

    • Princeton University
    • Thales Group

  • Mouktik Raha

    • Princeton University

  • Zihuai Zhang

    • Princeton University

  • Paul Stevenson

    • Physics, Northeastern University
    • Princeton University

  • Jeff Thompson

    • Princeton University

  • Nathalie De Leon

    • Princeton University