Photoconductivity of 2D Tin-doped Indium Selenide (In_1-xSn_xSe)

Selenide based binary- and ternary-layered compounds show exotic physical properties and could aid in developing future electronic & opto-electronics based applications.¹ It has been demonstrated that proper alloying of ternary alloys [e.g. Copper Indium Selenide (CuIn₇Se₁₁)] can lead to layered structure with to enhanced electronic and opto-electronic properties. In this talk, we will report on the investigations of photoconductive properties of few-layered Tin-doped Indium Selenide (In_1-xSn_xSe). Specifically, our investigation will focus on Tin doping with x = 0, 0.05, 0.1 and 1. We will also present and discuss the evolution of electronic band structure of these compounds under increased tin concentration through first principle density functional theory (DFT) and its effect on the photo responsive behaviour of the compounds.

Reference:
1. M. Wasala et al., J. Mater. Chem. C 5, 11214-11225 (2017).