Interfacial Charge Transfer and Gate Induced Hysteresis in Monochalcogenide InSe/GaSe Heterostructures

ORAL

Abstract

Heterostructures of 2D van der Waals semiconductor materials offer a diverse playground for exploring fundamental physics and potential device applications. In InSe/GaSe heterostructures formed by sequential mechanical exfoliation and stacking of 2D monochalcogenides InSe and GaSe, we observe charge transfer between InSe and GaSe due to the 2D van der Waals interface formation and a strong hysteresis effect in the electron transport through the InSe layer when a gate voltage is applied through the GaSe layer. A gate voltage dependent conductance decay rate is also observed. We relate these observations to the gate voltage dependent dynamical charge transfer between InSe and GaSe layers.
ACS Appl. Mater. Interfaces 2020, 12, 41, 46854–46861

*The authors acknowledge the financial support from NSF (DMR-1607631) and Raman Sankar and Art Ramirez for providing some of the bulk InSe, GaSe crystals used in this work.

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Presenters

  • Arvind Shankar Kumar

    • Case Western Reserve University
    • Physics, Case Western Reserve University

Authors

  • Arvind Shankar Kumar

    • Case Western Reserve University
    • Physics, Case Western Reserve University

  • Mingyuan Wang

    • Physics, Case Western Reserve University

  • Yancheng Li

    • Physics, Case Western Reserve University

  • Ryuji Fujita

    • Physics, Oxford University

  • Xuan Gao

    • Case Western Reserve University
    • Physics, Case Western Reserve University
    • Department of Physics, Case Western Reserve University