Nonvolatile ReS<sub>2</sub> transistors gated by highly ordered ferroelectric polymer nanowires
ORAL
Abstract
In this work, we report the fabrication and characterization of high performance of ReS2 field effect transistors gated by highly ordered ferroelectric polymer nanowires. We deposited 2 - 20 nm poly(vinylidene-fluoride-trifluorethylene) (P(VDF-TrFE)) thin films on mechanically exfoliated ReS2 layers using the Langmuir-Blodgett technique. After thermal annealing, the P(VDF-TrFE) films recrystallize into highly ordered nanowire structures with a radius of 10 or 25 nm. The nanowires are closely packed and well aligned along the direction perpendicular to the b-axis of ReS2. TEM studies showed that the molecular chains’ orientation is highly ordered within the nanowire, and revealed an epitaxial relation between ReS2 and nanowires. We then characterized the polarization of the nanowires using vertical and lateral piezo-response force microscopy (PFM), which shows a predominately out-of-plane polarization. Switching the polarization of the nanowires can lead to the change of conductivity in underlying few-layer ReS2, with a switching on-off ratio of up to 108. Our study provides a novel approach to fabricating high-quality ferroelectric-gated nonvolatile 2D field effect transistors.
*This work was primarily supported by the US DOE Award # DE-SC0016153.
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Presenters
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Kun Wang
- Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln
- University of Nebraska - Lincoln