One-Dimensional Edge Contact to Encapsulated MoS<sub>2</sub> with a Superconductor
ORAL
Abstract
Establishing ohmic contact to van der Waals semiconductors such as MoS2 is crucial to unlocking their full potential in next-generation electronic devices. Encapsulation of few layer MoS2 with hBN preserves the material’s electronic properties but makes electrical contacts more challenging. Progress toward high quality edge contact to encapsulated MoS2 has been recently reported. We evaluate an edge contact methodology using sputtered MoRe, a Type II superconductor with a relatively high critical field and temperature. While the resulting contact is not ohmic, this work has ramifications for future contact recipes and may hold promise for application to hybrid structures.
*A.S., E.G.A, T.F.L., L.Z., and G.F. acknowledge support by ARO Award W911NF16-1-0122 and the Office of Basic Energy Sciences, US DOE under Award de-sc0002765. V.Z.C. and A.K.M.N. acknowledge support from the NSF Grant ECCS-1708907 and DoD Award (ID:72495RTREP). K.W.and T.T. acknowledge the Elemental Strategy Initiative conducted by the MEXT, Japan and the CREST (JPMJCR15F3), JST. F.A. acknowledges ARO Award W911NF-16-1-0132. This work was performed in part at the Duke University Shared Materials Instrumentation Facility, part of the NC Research Triangle Nanotechnology Network, supported by NSF Grant ECCS-1542015.
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Presenters
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Andrew Seredinski
- Wentworth Institute of Technology
- Wentworth Inst of Tech
- Duke University