Remote Capacitive Sensing in Two-Dimensional Quantum-Dot Arrays
ORAL
Abstract
We investigate gate-induced quantum dots in silicon nanowire fabricated using a foundry-compatible fully depleted silicon-on-insulator (FD-SOI) process. A series of split gates overlapping the silicon nanowire naturally produces a 2 × n bilinear array of quantum dots. We present the capacitive coupling of quantum dots within such a 2 × 2 array and then show how such couplings can be extended across two parallel silicon nanowires coupled together by shared, electrically isolated, “floating” electrodes. With one quantum dot operating as a single-electron-box sensor, the floating gate serves to enhance the charge sensitivity range, enabling it to detect charge state transitions in a separate silicon nanowire. By comparing measurements from multiple devices, we illustrate the impact of the floating gate by quantifying both the charge sensitivity decay as a function of dot-sensor separation and configuration within the dual-nanowire structure.
*
The authors acknowledge the support from the European Union’s Horizon 2020 research and innovation programme(Grant 688539), Engineering and Physical Sciences Research Council through the CDT in Delivering Quantum Technologies (EP/L015242/1), QUES2T (EP/N015118/1), and the Hub in Quantum Computing and Simulation (EP/T001062/1).
–
Presenters
-
Jingyu Duan
- University College London
- University College London, Quantum Motion Technologies