Robust photon-mediated entangling gates between single-electron quantum dots
ORAL
Abstract
Recent experimental and theoretical work on single-electron spin qubits in silicon has opened the possibility of realizing long-distance entangling gates mediated by microwave photons. Currently proposed iSWAP gates, however, require qubits to be tuned to resonance with one another, and have limited fidelity due to charge noise. We present here a novel, photon-mediated cross-resonance gate which requires no resonant tuning, as well as a nested entangling gate sequence capable of suppressing gate errors due to quasistatic charge noise.
*This work is supported by the Army Research Office (W911NF-17-0287).
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Presenters
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Ada Warren
- Virginia Tech