The impact of donor incorporation statistics on analog quantum simulations of Hubbard physics in near-atomic precision donor arrays
ORAL
Abstract
Atomic precision advanced manufacturing (APAM) is a promising approach for analog quantum simulation of strongly correlated systems. APAM relies on scanning tunneling microscope lithography to place single P donors precisely in Si. Assessing the impact of experimentally demonstrated stochastic donor incorporation on device performance is vital to understanding the limits of analog quantum simulation. Using a nonequilibrium Green’s function formalism, we simulate transport characteristics of Hubbard models based-on P donors in Si, and the effects of probabilistic donor incorporation on these transport characteristics. Using our model, we find limits on the Hamiltonians one can target without losing prominent physical features of the model to missing donors.
*This work was supported by the Laboratory Directed Research and Development Program at Sandia National Laboratories and was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE, Office of Basic Energy Sciences user facility. SNL is managed and operated by NTESS under DOE NNSA contract DE-NA0003525. The views expressed in the article do not necessarily represent the views of the DOE or the U.S. Government.
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Presenters
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Mitchell Brickson
- Sandia National Laboratories