Electronic, vibronic, and magnetic properties of a carbon radical anion in 2D WS<sub>2</sub>
ORAL
Abstract
Two-dimensional transition metal dichalcogenides (2D-TMDs) are a promising class of materials with many novel applications due to a variety of electronic and optoelectronic properties combined with a synthetic flexibility and tunability. In particular, point defects within these materials have been identified as potential qubits for quantum information applications. In order to realize this goal, these defects must be characterized and controlled.
Here we use scanning tunneling microscopy and spectroscopy (STM/S) and CO functionalized tip atomic force microscopy (AFM) in combination with ab initio calculations to characterize a carbon point defect in WS2.[1] Previously, we identified a C-H complex as a common impurity in synthetic TMDs, which can also be doped with a methane plasma.[2] With the STM tip, we are able to selectively remove the hydrogen atom, resulting in a single, negatively charged carbon atom with a spin 1/2.[3] Here we demonstrate the ability to generate on demand, spin ½ centers with atomic precision and characterize the electronic and vibronic properties of these carbon point defects.
[1] Schuler, B., et al. ACS Nano 13, 9 (2019)
[2] Cochrane, K.A., et al. 2D Materials 7, 3 (2020)
[3] Cochrane, K.A., et al. arXiv preprint arXiv:2008.12196 (2020)
Here we use scanning tunneling microscopy and spectroscopy (STM/S) and CO functionalized tip atomic force microscopy (AFM) in combination with ab initio calculations to characterize a carbon point defect in WS2.[1] Previously, we identified a C-H complex as a common impurity in synthetic TMDs, which can also be doped with a methane plasma.[2] With the STM tip, we are able to selectively remove the hydrogen atom, resulting in a single, negatively charged carbon atom with a spin 1/2.[3] Here we demonstrate the ability to generate on demand, spin ½ centers with atomic precision and characterize the electronic and vibronic properties of these carbon point defects.
[1] Schuler, B., et al. ACS Nano 13, 9 (2019)
[2] Cochrane, K.A., et al. 2D Materials 7, 3 (2020)
[3] Cochrane, K.A., et al. arXiv preprint arXiv:2008.12196 (2020)
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Presenters
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Katherine Cochrane
- Lawrence Berkeley National Laboratory