Intralayer moiré exciton states in transition metal dichalcogenide heterostructures: a GW-BSE study
ORAL
Abstract
Recent experimental measurements have shown signatures of novel exciton states in the moiré superlattices of transition metal dichalcogenide bilayer heterostructures. In the WS2/WSe2 heterostructure, the WSe2 “A” exciton resonance is found to split into multiple peaks as the twist angle between the two layers approaches zero [1]. This splitting is directly correlated to the formation of a large-scale (~8.5 nm) moiré pattern at zero twist angle. Computing the optical properties of this system by brute force using first principles is intractable owing to the large number of atoms (~4000) in the moiré superlattice and the requirement of a fine k-point sampling of the Brillouin zone. We demonstrate an efficient approximation to solve the GW plus Bethe-Salpeter equation of the reconstructed moiré which yields excitations with meV accuracy relative to the traditional approach. Using this method, we study the twist-angle dependence of the absorption spectrum of intralayer excitons in the WS2/WSe2 moiré superlattice.
[1] C. Jin, et al. Nature 567, 76–80 (2019)
*This work was supported by the US DOE at Lawrence Berkeley National Lab under contract no. DE-AC02-05CH11231 and the C2SEPEM under contract No. DE-AC02-05CH11231. Computational resources have been provided by NERSC, TACC and XSEDE.
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Presenters
Mit Naik
Department of Physics, University of California at Berkeley
University of California at Berkeley and Lawrence Berkeley National Laboratory
Department of physics, University of California at Berkeley, Berkeley, California
Authors
Mit Naik
Department of Physics, University of California at Berkeley
University of California at Berkeley and Lawrence Berkeley National Laboratory
Department of physics, University of California at Berkeley, Berkeley, California
Yang-hao Chan
Lawrence Berkeley National Laboratory
University of California at Berkeley and Lawrence Berkeley National Laboratory
University of California, Berkeley
Department of physics, University of California at Berkeley, Berkeley, California
Zhenglu Li
Department of Physics, University of California, Berkeley
UC Berkeley & Lawrence Berkeley National Laboratory
University of California at Berkeley, and Lawrence Berkeley National Laboratory
University of California at Berkeley and Lawrence Berkeley National Laboratory
Lawrence Berkeley National Laboratory
University of California, Berkeley
Lawrence Berkeley National Laboratory and University of California at Berkeley
Department of physics, University of California at Berkeley, Berkeley, California
Chin Shen Ong
University of California at Berkeley, and Lawrence Berkeley National Laboratory
Department of physics, University of California at Berkeley, Berkeley, California
Felipe Da Jornada
Stanford University
Materials Science and Engineering, Stanford University
Department of Materials Science and Engineering, Stanford University
Stanford Univ
Department of Materials Science and Engineering, Stanford University, Stanford, California
Steven G Louie
University of California, Berkeley
Department of Physics, University of California, Berkeley
University of California at Berkeley and Lawrence Berkeley National Laboratory
UC Berkeley & Lawrence Berkeley National Laboratory
University of California at Berkeley, and Lawrence Berkeley National Laboratory
Lawrence Berkeley National Laboratory
Department of physics, University of California at Berkeley, Berkeley, California