Development of Integrated Device Simulator for Silicon Quantum Bit Design

ORAL

Abstract

Silicon qubits have attracted much attention as a building block of quantum computers (QCs) because of their huge potential for mass production. However, at this stage, the number of silicon qubits in operation is limited because an appropriate qubit design methodology is lacking. Therefore, a new simulator for silicon qubit design is strongly required to accelerate the development of QCs.
A precise analysis of the quantum state in the qubit region is a fundamental part of the qubit design. However, an analysis of the semi-classical device region surrounding the qubit is also essential for qubit simulation because it controls the qubit state through the confinement potential and applied field and dynamically couples with the qubit. Consequently, consistent handling of both regions is indispensable for qubit design.
In this presentation, we integrate newly developed methods for qubit simulation into a single device simulation platform and perform self-consistent simulations of qubit characteristics considering a whole device structure. Using this simulator, we achieve simultaneous simulation of quantum transport and qubit operation.

*This work was supported by the MEXT Quantum Leap Flagship Program (Q-LEAP) Grant No. JPMXS0118069228, Japan, and JSPS KAKENHI Grant No. JP20K04635.

Presenters

  • Hidehiro Asai

    • AIST

Authors

  • Hidehiro Asai

    • AIST
  • Shota Iizuka

    • AIST
    • National Institute of Advanced Industrial Science and Technology
  • Tsutomu Ikegami

    • AIST
  • Junichi Hattori

    • AIST
  • Koich Fukuda

    • AIST
  • Hiroshi Oka

    • AIST
    • National Institute of Advanced Industrial Science and Technology
  • Kimihiko Kato

    • AIST
    • National Institute of Advanced Industrial Science and Technology
  • Hiroyuki Ota

    • AIST
  • Takahiro Mori

    • AIST, Japan
    • AIST
    • National Institute of Advanced Industrial Science and Technology