From Atoms to Transistors

 · Invited

Abstract

Since the advent of atomic manipulation with the scanning tunneling microscope (STM), a significant challenge for atomic scale fabrication has been to build structures large enough to exhibit emergent phenomena. STM-based hydrogen lithography on silicon can be used to create donor-based electronic devices atom-by-atom, a process we refer to as atomic precision advanced manufacturing (APAM). Although this capability promises to create a tactile link between atomic structure and system-level behavior, application of this technique has been held back by two factors. I will detail our efforts to both make more atomically perfect devices, and more complex devices. Moving forward, these advances open the door to using the technology to create everything from analog quantum simulators to new transistor technologies in silicon.

*This work was supported by the Laboratory Directed Research and Development Program at Sandia National Laboratories and was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE, Office of Basic Energy Sciences user facility. SNL is managed and operated by NTESS under DOE NNSA contract DE-NA0003525. The views expressed in the article do not necessarily represent the views of the DOE or the U.S. Government.

Presenters

  • Shashank Misra

    • Sandia National Laboratories

Authors

  • Shashank Misra

    • Sandia National Laboratories